{"id":23972,"date":"2026-02-12T18:53:46","date_gmt":"2026-02-12T17:53:46","guid":{"rendered":"https:\/\/telecomkh.info\/?p=23972"},"modified":"2026-02-12T18:53:46","modified_gmt":"2026-02-12T17:53:46","slug":"samsung-ships-industry-first-commercial-hbm4-with-ultimate-performance-for-ai-computing","status":"publish","type":"post","link":"https:\/\/telecomkh.info\/?p=23972","title":{"rendered":"Samsung ships industry-first commercial HBM4 with ultimate performance for AI Computing"},"content":{"rendered":"

Secure process technology and supply capabilities strengthen Samsung\u2019s HBM roadmap beyond HBM<\/strong><\/p>\n

Samsung Electronics, a global leader in advanced memory technology, today announced that it has begun mass production of its industry-leading HBM4 and has shipped commercial products to customers. This achievement marks a first in the industry, securing an early leadership position in the HBM4 market.
\nBy proactively leveraging its most advanced 6th-generation 10 nanometer (nm)-class DRAM process (1c), the company achieved stable yields and industry-leading performance from the outset of mass production \u2014 all accomplished seamlessly and without any additional redesigns.
\n\u201cInstead of taking the conventional path of utilizing existing proven designs, Samsung took the leap and adopted the most advanced nodes like the 1c DRAM and 4nm logic process for HBM4,\u201d said Sang Joon Hwang, Executive Vice President and Head of Memory Development at Samsung Electronics. \u201cBy leveraging our process competitiveness and design optimization, we are able to secure substantial performance headroom, enabling us to satisfy our customers\u2019 escalating demands for higher performance, when they need them.\u201d<\/p>\n

Setting the Bar for Maximum Performance and Efficiency<\/strong>
\nSamsung\u2019s HBM4 delivers a consistent processing speed of 11.7 gigabits-per-second (Gbps), exceeding the industry standard of 8Gbps by approximately 46% and setting a new benchmark for HBM4 performance. This represents a 1.22x increase over the maximum pin speed of 9.6Gbps of its predecessor, HBM3E. HBM4\u2019s performance can be further enhanced up to 13Gbps, as well, effectively mitigating data bottlenecks that intensify as AI models continue to scale up.
\nAlso, total memory bandwidth per single stack is increased by 2.7x compared to HBM3E, to a maximum of 3.3 terabytes-per-second (TB\/s).
\nThrough 12-layer stacking technology, Samsung offers HBM4 in capacities ranging from 24 gigabytes (GB) to 36GB. The company will also keep its capacity options aligned with future customer timelines by utilizing 16-layer stacking, which will expand offerings to up to 48GB.
\nIn order to address power consumption and thermal challenges driven by the doubling of data I\/Os from 1,024 to 2,048 pins, Samsung has integrated advanced low-power design solutions into the core die. HBM4 also achieves a 40% improvement in power efficiency by leveraging low-voltage through silicon via (TSV) technology and power distribution network (PDN) optimization, while enhancing thermal resistance by 10% and heat dissipation by 30%, compared to HBM3E.
\nBy bringing outstanding performance, energy efficiency and high reliability to tomorrow\u2019s datacenter environments, Samsung\u2019s HBM4 enables customers to achieve maximized GPU throughput and effectively manage their total cost of ownership (TCO).<\/p>\n

Comprehensive Yet Agile Production Capabilities<\/strong>
\nSamsung is committed to advancing its HBM roadmap through its comprehensive manufacturing resources \u2014 including one of the largest DRAM production capacities and dedicated infrastructures in the industry \u2014 ensuring a resilient supply chain to meet the projected surge in HBM4 demand.
\nA tightly integrated Design Technology Co-Optimization (DTCO) between the company\u2019s Foundry and Memory Businesses allows it to secure the highest standards of quality and yield. Additionally, extensive in-house expertise in advanced packaging allows for streamlined production cycles and reduced lead times.
\nSamsung also plans to broaden the scope of its technical partnership with key partners, based on close discussions with global GPU manufacturers and hyperscalers focused on next-generation ASIC development.
\nSamsung anticipates that its HBM sales will more than triple in 2026 compared to 2025, and is proactively expanding its HBM4 production capacity. Following the successful introduction of HBM4 to market, sampling for HBM4E is expected to begin in the second half of 2026, while custom HBM samples will start reaching customers in 2027, according to their respective specifications.<\/p>\n

Above, image credited to Samsung Electronics<\/em><\/span><\/p>\n

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Secure process technology and supply capabilities strengthen Samsung\u2019s HBM roadmap beyond HBM Samsung Electronics, a global leader in advanced memory technology, today announced that it has begun mass production of its industry-leading HBM4 and has shipped commercial products to customers. This achievement marks a first in the industry, securing an early leadership position in the … <\/p>\n

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